Factory Lead Time  

14 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

110A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

50 ns

Power Dissipation (Max)  

200W Tc

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2002

Series  

HEXFET®

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Voltage - Rated DC  

55V

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Current Rating  

110A

Time@Peak Reflow Temperature-Max (s)  

30

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

200W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 62A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3247pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

146nC @ 10V

Rise Time  

101ns

Vgs (Max)  

±20V

Fall Time (Typ)  

65 ns

Continuous Drain Current (ID)  

110A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

75A

Drain-source On Resistance-Max  

0.008Ohm

Drain to Source Breakdown Voltage  

55V

Avalanche Energy Rating (Eas)  

264 mJ

Height  

9.65mm

Length  

10.668mm

Width  

4.826mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free